Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer
作者： Chun-Yen Tseng , Ching-Ting Lee , Oleg P. Pchelyakov , Valerii V. Preobrazhenskii
DOI: 10.1016/J.SOLENER.2015.04.045
关键词:
摘要: Abstract In this study, epitaxial layers of GaAs-based solar cells were grown on Si substrates using a molecular beam system. The pyramid-like via hole recessed electrode structure was fabricated the back side substrate to improve performance resulting cells. Since current path effectively reduced by structure, associated series resistance and carrier recombination loss GaAs/Si decreased. Consequently, conversion efficiency enhancement 21.8% with obtained due improvement in short-circuit density fill factor compared conventional
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