Nitride-based concentrator solar cells grown on Si substrates
作者： CY Liu , CC Lai , JH Liao , LC Cheng , HH Liu
DOI: 10.1016/J.SOLMAT.2013.05.017
关键词:
摘要: InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands employed to alleviate the material mismatches between GaN. The devices characterized under illumination of AM 1.5 G with different concentrations. As concentration ratios increased from 1-sun 105-sun, energy conversion efficiency was enhanced by 25%, which noticeably greater than enhancement reported sapphire substrates similar result is attributed superior heat sinking
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