Temperature Effect on InGaN/GaN Multiwell Quantum Solar Cells Performances
作者： N. Harchouch , Abdelkader Aissat , A. Laidouci , J. P. Vilcot
DOI: 10.1007/978-3-319-73192-6_52
关键词:
摘要: In this paper, we are interested in modeling and simulations of InGaN/GaN Quantum Wells Solar Cell, like all other semiconductor devices solar cells sensitive to temperature, the most parameter affected by rise temperature is open circuit voltage Voc. thermal effects on multiple quantum well (MQWSCs) with an Indium concentration 0.28 studied. A 280 K gives better results voltage, maximum power output conversion efficiency their values 1.84 V, 24.86 mW/cm2 24.87% respectively.
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