Well-width dependence of the quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells
作者： KC Zeng , J Li , JY Lin , HX Jiang , None
DOI: 10.1063/1.126572
关键词: Quantum efficiency 、 Heterojunction 、 Photoluminescence 、 Wide-bandgap semiconductor 、 Spectroscopy 、 Picosecond 、 Optoelectronics 、 Materials science 、 Metalorganic vapour phase epitaxy 、 Chemical vapor deposition
摘要: A set of GaN/AlxGa1−xN(x≈0.2) multiple quantum wells (MQWs) with well widths, Lw, varying from 6 to 48 has been grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. Picosecond time-resolved photoluminescence spectroscopy employed probe well-width dependence efficiencies (QE) these MQWs. Our results have shown that GaN/AlGaN MQW structures exhibit negligibly small piezoelectric effects and hence enhanced QE. Furthermore, GaN/AlxGa1−xN MQWs Lw between 12 42 were observed provide highest QE, which can be attributed reduced nonradiative recombination rate as improved quantum-well quality. The decreased QE in 42 A is associated an increased approaching critical thickness implications our re...
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