Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

作者: Tetsuya Takeuchi , Shigetoshi Sota , Maki Katsuragawa , Miho Komori , Hideo Takeuchi

DOI: 10.1143/JJAP.36.L382

关键词: Quantum-confined Stark effectStark effectPiezoelectricityField (physics)Condensed matter physicsElectric fieldExcitationQuantum wellChemistryPhotoluminescence

摘要: … We have studied the influence of piezoelectric fields on … MV/cm is induced by the piezoelectric effect in strained Ga 0.87 In … well explained when the piezoelectric fields were taken into …

参考文章(22)
J.W. Matthews, A.E. Blakeslee, Defects in epitaxial multilayers Journal of Crystal Growth. ,vol. 32, pp. 265- 273 ,(1976) , 10.1016/0022-0248(76)90041-5
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama, Takao Yamada, Takashi Mukai, Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes Japanese Journal of Applied Physics. ,vol. 34, ,(1995) , 10.1143/JJAP.34.L1332
Richard L. Tober, Thomas B. Bahder, Determining the electric field in [111] strained‐layer quantum wells Applied Physics Letters. ,vol. 63, pp. 2369- 2371 ,(1993) , 10.1063/1.110478
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin‐ichi Nagahama, High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes Applied Physics Letters. ,vol. 67, pp. 1868- 1870 ,(1995) , 10.1063/1.114359
D. L. Smith, C. Mailhiot, Optical properties of strained-layer superlattices with growth axis along [111] Physical Review Letters. ,vol. 58, pp. 1264- 1267 ,(1987) , 10.1103/PHYSREVLETT.58.1264
G. Martin, A. Botchkarev, A. Rockett, H. Morkoç, Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy Applied Physics Letters. ,vol. 68, pp. 2541- 2543 ,(1996) , 10.1063/1.116177
Decai Sun, Elias Towe, Strain-Generated Internal Fields in Pseudomorphic (In, Ga)As/GaAs Quantum Well Structures on {11l} GaAs Substrates Japanese Journal of Applied Physics. ,vol. 33, pp. 702- 708 ,(1994) , 10.1143/JJAP.33.702
S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra, S. P. Den Baars, Growth and characterization of bulk InGaN films and quantum wells Applied Physics Letters. ,vol. 68, pp. 3147- 3149 ,(1996) , 10.1063/1.115806
A. Fischer, H. Kühne, H. Richter, New approach in equilibrium theory for strained layer relaxation. Physical Review Letters. ,vol. 73, pp. 2712- 2715 ,(1994) , 10.1103/PHYSREVLETT.73.2712
Tetsuya Takeuchi, Hideo Takeuchi, Shigetoshi Sota, Hiromitsu Sakai, Hiroshi Amano, Isamu Akasaki, Optical Properties of Strained AlGaN and GaInN on GaN Japanese Journal of Applied Physics. ,vol. 36, ,(1997) , 10.1143/JJAP.36.L177