Determining the electric field in [111] strained‐layer quantum wells
作者： Richard L. Tober , Thomas B. Bahder
DOI: 10.1063/1.110478
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摘要: The electric field in a [111] growth‐axis strained‐layer quantum well embedded p‐i‐n diode is determined by measuring the polarization vector well. from critical reverse bias necessary to produce zero obtained electroreflectance spectra, which have optical features that exhibit 180° phase change at flat band. A depletion model of with an used relate applied and
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D.L. Smith, Strain-generated electric fields in [111] growth axis strained-layer superlattices Solid State Communications. ,vol. 57, pp. 919- 921 ,(1986) , 10.1016/0038-1098(86)90924-5
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, C. A. Burrus, Electric field dependence of optical absorption near the band gap of quantum-well structures. Physical Review B. ,vol. 32, pp. 1043- 1060 ,(1985) , 10.1103/PHYSREVB.32.1043
B. V. Shanabrook, O. J. Glembocki, W. T. Beard, Photoreflectance modulation mechanisms in GaAs- Al x Ga 1 − x As multiple quantum wells Physical Review B. ,vol. 35, pp. 2540- 2543 ,(1987) , 10.1103/PHYSREVB.35.2540
D. L. Smith, C. Mailhiot, Theory of semiconductor superlattice electronic structure Reviews of Modern Physics. ,vol. 62, pp. 173- 234 ,(1990) , 10.1103/REVMODPHYS.62.173
RW Martin, M Lakrimi, C Lopez, RJ Nicholas, ETR Chidley, NJ Mason, PJ Walker, Magnetotransport of piezoelectric [111] oriented strained quantum wells Applied Physics Letters. ,vol. 59, pp. 659- 661 ,(1991) , 10.1063/1.105356
Thomas B. Bahder, Analytic dispersion relations near the Γ point in strained zinc-blende crystals Physical Review B. ,vol. 45, pp. 1629- 1637 ,(1992) , 10.1103/PHYSREVB.45.1629