Characterizing electric fields in (111)B InGaAs quantum wells using electric field modulated photoluminescence and reflectance techniques
作者： Richard L. Tober , Thomas B. Bahder , John D. Bruno
DOI: 10.1007/BF02659742
关键词: Photon 、 Excitation 、 Condensed matter physics 、 Quantum well 、 Excited state 、 Field (physics) 、 Electro-absorption modulator 、 Atomic physics 、 Electric field 、 Photoluminescence 、 Chemistry 、 Electrical and Electronic Engineering 、 Materials Chemistry 、 Electronic, Optical and Magnetic Materials
摘要: We have performed a series of electroreflectance, photoluminescence, and electric-field-modulated photoluminescence experiments to characterize the strain-induced electric fields in (111)B InGaAs/AlGaAs quantum well p-i-n diode structures. A 180° phase change lineshapes electroreflectance spectra these samples determines when is biased flatband. Using this bias depletion model for diode, polarization field can be determined. Contrary expectations, increases significantly with increasing temperature. In addition, at fixed temperature, transition energies red-shift excitation intensity excited by photons energy higher than lowest but lower AlGaAs diode's bandgap. When greater bandgap, first red shifts then blue intensity.
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