Interband Auger recombination in InGaAsP
作者： L. Chiu , P. Chen , A. Yariv
关键词: Auger effect 、 Materials science 、 Auger 、 Optoelectronics 、 Laser 、 Atomic physics 、 Threshold current
摘要: The interband Auger recombination lifetimes of two processes have been calculated to correlate measured threshold current densities and carrier for InGaAsP InGaAsSb lasers. Good aggreement with experimental data was obtained lasers low nominal densities. These results demonstrate the importance in characteristics InGaAsP/InP
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