Organosilicon gels containing silicon-silicon bonds, precursors to novel silicon oxycarbide compositions

摘要: Organosilicon gel compounds were obtained from chlorodisilanes with the general formula (CH3)xCl6−xSi2 which may be available as industrial byproducts. Their thermal behavior was investigated by TG-MS analysis and IR NMR spectroscopy. Pyrolysis leads to high yields of silicon oxycarbides novel oxygen-poor compositions. From data, entire range tetrahedral units SiC4 SiO4 is observed early 800°C. Conversion into carbide carboreduction reaction occurs above 1400°C; it associated an extensive loss CO SiO needed meet SiC stoichiometry.