Resputtering effects on the stoichiometry of YBa2Cu3Ox thin films
作者： T. I. Selinder , G. Larsson , U. Helmersson , S. Rudner
DOI: 10.1063/1.347727
关键词: Deposition (phase transition) 、 Inorganic chemistry 、 Substrate (electronics) 、 Particle 、 Thin film 、 Sputtering 、 Argon 、 Stoichiometry 、 Materials science 、 Sputter deposition 、 Analytical chemistry
摘要: Energetic particle bombardment of the substrate during deposition will under certain process conditions adversely affect properties YBa2Cu3Ox thin films. Films were grown by dc magnetron sputtering from stoichiometric compound targets in a planar geometry. An increased oxygen fraction gas entailed drastic decrease film rate. Etching substrates was observed pure plasmas for pressures below 2 Pa. For whole range mixtures, composition deteriorated if too low total used; that is, even argon used as working gas. Copper deficiency these and attributed to resputtering growing energetic particles. This conclusion supported copper films at negative bias, i.e., ion plasmas. The origin various particles normal is discussed. We concluded oxy...
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