作者: Dong Rip Kim , Chi Hwan Lee , Pratap Mahesh Rao , In Sun Cho , Xiaolin Zheng
DOI: 10.1021/NL2009636
关键词: Charge carrier 、 Optics 、 Materials science 、 Silicon nitride 、 Thin film 、 Optoelectronics 、 Solar cell 、 Passivation 、 Planar 、 Characterization (materials science) 、 p–n junction
摘要: We report an efficient hybrid Si microwire (radial junction) and planar solar cell with a maximum efficiency of 11.0% under AM 1.5G ill;umination. The the is improved from 7.2% to by passivating top surface p–n junction thin a-SiN:H intrinsic poly-Si films, respectively, higher than that cells identical layers due increased light absorption charge-carrier collections in both wires components.