作者: Seung Bum Rim , David D. Smith , Peter J. Cousins
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摘要: A method for manufacturing high efficiency solar cells is disclosed. The comprises providing a thin dielectric layer and doped polysilicon on the back side of silicon substrate. Subsequently, quality oxide wide band gap semiconductor can both be formed front sides metallization process to plate metal fingers onto through contact openings then performed. plated form first gridline. second gridline by directly plating an emitter region substrate, eliminating need Among advantages, manufacture provides decreased thermal processes, etching steps, increased simplified procedure cells.