Surface-diffusion enhanced Ga incorporation in ZnO nanowires by oxygen vacancies
作者： Jianyu Wang , Huabin Sun , Yun Sheng , Lijun Yang , Fan Gao
DOI: 10.1016/J.APSUSC.2015.11.177
关键词: Epitaxy 、 Surface diffusion 、 Impurity 、 Diffusion barrier 、 Bond energy 、 Oxygen 、 Materials science 、 Nanowire 、 Chemical physics 、 Nanotechnology 、 Semiconductor
摘要: Abstract The surface diffusion process substantially influences the epitaxial growth of semiconductor nanowires. spontaneous incorporation Ga and uniform axial-distribution over long ZnO nanowires are experimentally observed, which is attributed to on sidewalls. existence abundant oxygen vacancies nanowire sidewalls greatly enhances diffusion. Simulation dynamics performed, strong bond energy between O atoms verified. With assistance an vacancy, barrier for decreased from 1.26 0.85 eV, resulting in a two orders magnitude increase coefficient. present work demonstrates key role enhanced impurity during nanostructured semiconductors.
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