Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy

作者: Zhi Zhang , Sui-Xing Shi , Ping-Ping Chen , Wei Lu , Jin Zou

DOI: 10.1088/0957-4484/26/25/255601

关键词:

摘要: In this study, the effect of substrate orientation on structural quality Au-catalyzed epitaxial GaAs nanowires grown by a molecular beam epitaxy reactor has been investigated. It was found that orientations can be used to manipulate nanowire catalyst composition and surface energy and, therefore, alter different substrates. Defect-free wurtzite-structured (110) have achieved under our growth conditions.

参考文章(39)
MT Björk, BJ Ohlsson, Claes Thelander, AI Persson, Knut Deppert, LR Wallenberg, Lars Samuelson, None, Nanowire resonant tunneling diodes Applied Physics Letters. ,vol. 81, pp. 4458- 4460 ,(2002) , 10.1063/1.1527995
J. S. Blakemore, Semiconducting and other major properties of gallium arsenide Journal of Applied Physics. ,vol. 53, ,(1982) , 10.1063/1.331665
Hannah J. Joyce, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Yong Kim, Xin Zhang, Yanan Guo, Jin Zou, Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process Nano Letters. ,vol. 7, pp. 921- 926 ,(2007) , 10.1021/NL062755V
Zhi Zhang, Kun Zheng, Zhen-Yu Lu, Ping-Ping Chen, Wei Lu, Jin Zou, Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires Nano Letters. ,vol. 15, pp. 876- 882 ,(2015) , 10.1021/NL503556A
M Tchernycheva, J C Harmand, G Patriarche, L Travers, G E Cirlin, Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy. Nanotechnology. ,vol. 17, pp. 4025- 4030 ,(2006) , 10.1088/0957-4484/17/16/005
V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, I. P. Soshnikov, W. H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.-P. Nys, D. Stievenard, M. Moewe, L. C. Chuang, C. Chang-Hasnain, Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires Physical Review B. ,vol. 79, pp. 205316- ,(2009) , 10.1103/PHYSREVB.79.205316
Hong-Yi Xu, Ya-Nan Guo, Zhi-Ming Liao, Wen Sun, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Jin Zou, Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures Applied Physics Letters. ,vol. 102, pp. 203108- 203108 ,(2013) , 10.1063/1.4807597
Jia Wang, Sébastien Plissard, Moïra Hocevar, Thuy T. T. Vu, Tilman Zehender, George G. W. Immink, Marcel A. Verheijen, Jos Haverkort, Erik P. A. M. Bakkers, Position-controlled [100] InP nanowire arrays Applied Physics Letters. ,vol. 100, pp. 1- 3 ,(2012) , 10.1063/1.3679136
Máximo López, Yasuhiko Nomura, Surface diffusion length of Ga adatoms in molecular-beam epitaxy on GaAs(100)-(110) facet structures Journal of Crystal Growth. ,vol. 150, pp. 68- 72 ,(1995) , 10.1016/0022-0248(95)80182-C
Frank Glas, Jean-Christophe Harmand, Gilles Patriarche, Why does wurtzite form in nanowires of III-V zinc blende semiconductors? Physical Review Letters. ,vol. 99, pp. 146101- ,(2007) , 10.1103/PHYSREVLETT.99.146101