Position-controlled [100] InP nanowire arrays
作者： Jia Wang , Sébastien Plissard , Moïra Hocevar , Thuy T. T. Vu , Tilman Zehender
DOI: 10.1063/1.3679136
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摘要: We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on (100) substrates in vapor-liquid-solid mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled different parameters. A maximum 56% obtained and tapering caused lateral prevented situ HCl etching. Scanning microscopy, high-resolution transmission micro-photoluminescence have been used to properties.
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