Logic circuits using resonant-tunneling hot-electron transistors (RHETs)
作者： M. Takatsu , K. Imamura , H. Ohnishi , T. Mori , T. Adachihara
DOI: 10.1109/4.156447
关键词: Materials science 、 Logic gate 、 Resistor 、 Electrical engineering 、 Clock signal 、 Electronic circuit 、 Transistor 、 Frequency divider 、 Integrated circuit 、 Bipolar junction transistor 、 Optoelectronics
摘要: A full adder and a 1/2 frequency divider using resonant-tunneling hot-electron transistors (RHETs) are proposed. These circuits make the best use of negative differential conductance, feature RHETs, contain much fewer than used in conventional circuits. They were fabricated self-aligned InGaAs RHETs WSiN thin film resistors on single chip. The have an i-InGaAlAs/i-InGaAs collector barrier that improves current gain at low collector-based voltages. Circuit operation was confirmed 77 K with supply voltage 3 V. >
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sci-hub.se 参考文章(8)
Tsuguo Inata, Shunichi Muto, Yoshiaki Nakata, Shigehiko Sasa, Toshio Fujii, Satoshi Hiyamizu, A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature Japanese Journal of Applied Physics. ,vol. 26, ,(1987) , 10.1143/JJAP.26.L1332
S. W. Lu, C. W. Nieh, L. J. Chen, Epitaxial growth of NiSi2 on ion‐implanted silicon at 250–280 °C Applied Physics Letters. ,vol. 49, pp. 1770- 1772 ,(1986) , 10.1063/1.97239
Mordehai Heiblum, Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared Solid-State Electronics. ,vol. 24, pp. 343- 366 ,(1981) , 10.1016/0038-1101(81)90029-0
Naoki Yokoyama, Kenichi Imamura, Toshio Ohshima, Hidetoshi Nishi, Shunichi Muto, Kazuhiro Kondo, Satoshi Hiyamizu, Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions Japanese Journal of Applied Physics. ,vol. 23, pp. L311- L312 ,(1984) , 10.1143/JJAP.23.L311
Naoki Yokoyama, Kenichi Imamura, Shunichi Muto, Satoshi Hiyamizu, Hidetoshi Nishi, A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET) Japanese Journal of Applied Physics. ,vol. 24, pp. L853- L854 ,(1985) , 10.1143/JJAP.24.L853
K. Imaurua, T. Mori, H. Ohnishi, S. Muto, N. Yokoyama, Microwave performance of pseudomorphic resonant-tunnelling hot electron transistors at 77 K Electronics Letters. ,vol. 25, pp. 34- 35 ,(1989) , 10.1049/EL:19890025
Toshihiko Mori, Hiroaki Ohnishi, Kenichi Imamura, Syunichi Muto, Naoki Yokoyama, Resonant tunneling hot‐electron transistor with current gain of 5 Applied Physics Letters. ,vol. 49, pp. 1779- 1780 ,(1986) , 10.1063/1.97242
S. M. Sze, Physics of semiconductor devices /2nd edition/ New York. ,(1981)