EL2-related metastable defects in semi-insulating GaAs
作者： D. Kabiraj , Subhasis Ghosh
DOI: 10.1063/1.1667617
关键词: Context (language use) 、 Thermally stimulated current spectroscopy 、 Materials science 、 Semi insulating 、 Metastability 、 Condensed matter physics 、 Photoexcitation 、 Atomic physics 、 Gallium arsenide
摘要: Thermally stimulated current spectroscopy, photoquenching, and photorecovery have been used to reveal the EL2-related metastable defect levels in semi-insulating GaAs. It has found that one set of is directly related EL2 other indirectly through charge transfer. The origin these discussed context recently proposed three-center-complex model
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sci-hub.se 参考文章(21)
James F. Ziegler, Jochen P. Biersack, The Stopping and Ranges of Ions in Matter ,(2013)
Tyuzi Ohyama, Tetsuo Shimizu, Hiromi Kobori, Eizo Otsuka, Direct Evidence for a Charge-Controlled Optical Quenching of EL2 Centers in Semi-Insulating GaAs Japanese Journal of Applied Physics. ,vol. 32, pp. 1889- 1897 ,(1993) , 10.1143/JJAP.32.1889
Maki Suemitsu, Hidenori Takahashi, Nobuo Miyamoto, Deep-acceptor-mediated photoquenching of the midgap donor EL2 in semi-insulating GaAs. Physical Review B. ,vol. 52, pp. 1666- 1673 ,(1995) , 10.1103/PHYSREVB.52.1666
H. Ch. Alt, Fine structure of the oxygen‐related local mode at 714 cm−1in GaAs Applied Physics Letters. ,vol. 55, pp. 2736- 2738 ,(1989) , 10.1063/1.102269
Robert W. Jansen, Otto F. Sankey, Theory of relative native- and impurity-defect abundances in compound semiconductors and the factors that influence them Physical Review B. ,vol. 39, pp. 3192- 3206 ,(1989) , 10.1103/PHYSREVB.39.3192
Juan Jiménez, Alejandro Alvárez, Mohammed Chafai, Luis F. Sanz, Jacques Bonnafé, Optically induced recovery by near band gap photons (1.4 eV<hν<1.5 eV) of EL2 level from its metastable state in semi‐insulating GaAs Journal of Applied Physics. ,vol. 73, pp. 2871- 2877 ,(1993) , 10.1063/1.353015
Akihito Taguchi, Hiroyuki Kageshima, First-principles investigation of the oxygen negative- U center in GaAs Physical Review B. ,vol. 57, ,(1998) , 10.1103/PHYSREVB.57.R6779
Hyangsuk Seong, Laurent J. Lewis, Tight-binding molecular-dynamics study of point defects in GaAs Physical Review B. ,vol. 52, pp. 5675- 5684 ,(1995) , 10.1103/PHYSREVB.52.5675
G. A. Baraff, M. Schlüter, Electronic structure total energies, and abundances of the elementary point defects in GaAs Physical Review Letters. ,vol. 55, pp. 1327- 1330 ,(1985) , 10.1103/PHYSREVLETT.55.1327
A. Alvarez, J. Jiménez, M. A. González, Metastable transformation of EL2 in semi‐insulating GaAs: The role of the actuator level and the photoionization of EL2 Applied Physics Letters. ,vol. 68, pp. 2959- 2961 ,(1996) , 10.1063/1.116368