Field effect transistor and method for manufacturing semiconductor device

摘要: A structure with which the zero current of a field effect transistor using conductor-semiconductor junction can be reduced is provided. floating electrode ( 102 ) including conductor or semiconductor and being enclosed by an insulator 104 formed between layer 101 gate 105 so as to cross charged, whereby carriers are prevented from flowing source 103 drain b ). Accordingly, sufficiently low carrier concentration kept in thus reduced.