Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device
作者： Naho Itagaki , Tatsuya Iwasaki , Katsuyuki Hoshino
DOI:
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摘要: A laminated structure comprises a first layer comprising crystal with six-fold symmetry, and second metal oxynitride formed on the layer, wherein at least one element selected from group consisting of In, Ga, Si, Ge Al, N, O Zn, as main elements, has in-plane orientation.
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