Growth of InGaN with high indium content on ZnO based sacrificial substrates

摘要: ZnO has been considered as a substrate for epitaxial growth of III-Nitrides due to its close lattice and stacking order match. This paper will cover In x Ga 1-x N layer on lattice-matched substrates by metal-organic chemical vapor deposition (MOCVD). InGaN various indium compositions from different temperatures were well controlled in the films substrates. High-resolution X-ray diffraction (HRXRD) confirmed film ZnO. The optical structural characterization epilayer was measured room temperature photoluminescence, temperature-dependent field-emission secondary electron microscope. addition, transition Al 2 O 3 have employed help prevent Zn diffusion into epilayers assist nitride growth. HRXRD results show single crystal successfully grown annealed coated