Energy relaxation time of hot carriers photoexcited in InGaN
作者： T. Ushiyama , T. Toizumi , Y. Nakazato , A. Tackeuchi
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摘要: The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. time-resolved pump and probe transmission measurements with subpicosecond resolution show that the hot-carrier 0.92 ps at 15 K. becomes significantly shorter higher temperatures. At temperatures than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates electron-phonon scattering dominates carrier process. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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