Substrate for nitride semiconductor growth
作者： Toshiki Makimoto , Masanobu Hiroki , Kazuhide Kumakura
DOI:
关键词: Optoelectronics 、 Layer (electronics) 、 Sapphire substrate 、 Materials science 、 Nitride semiconductors 、 Atomic layer epitaxy 、 Substrate (electronics) 、 Electronic engineering 、 Crystal
摘要: A substrate for growth of nitride semiconductor capable obtaining a high-quality crystal layer is provided. on sapphire (1) according to one embodiment the invention provided with an Al2O3 (2) as separately (1), AlON (3) which first layer, and AlN (4) second layer. With respect are deposited in this order.
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