G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors
作者： Dmitry Miserev , Oleg Sushkov
DOI: 10.1140/EPJB/E2016-60894-Y
关键词: Semiconductor 、 Solid-state physics 、 Quantum dot 、 Condensed matter physics 、 Physics 、 Quantum mechanics 、 Magnetic field 、 Bound state 、 Acceptor 、 Spin-½ 、 Spin–orbit interaction
摘要: Holes in cubic semiconductors have effective spin 3/2 and very strong orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single by spherically symmetric potential, this can be an acceptor or quantum dot. Linear response external magnetic field is characterized the state Lande g-factor. calculate analytically g-factors all states.
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