A HIGH DENSITY NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY
作者： Khellah Muhammad M , Kuo Charles C , Augustine Charles , Chu-Kung Benjamin
DOI:
关键词: Reading (computer) 、 Die (integrated circuit) 、 Node (circuits) 、 Electrical engineering 、 Differential (infinitesimal) 、 Computer science
摘要: Described is an apparatus which comprises: a storage node; first device coupled to the second reference and node, wherein has negative differential resistance (NDR); third NDR; circuitry for reading data, node first, second, devices, are positioned in backend-of-line (BEOL) of die.
lens.org 参考文章(13)
Jan Genoe, Soeren Steudel, Zsolt Tokei, Filed programmable gate array device with programmable interconnect in back end of line portion of the device ,(2014)
Tsu-Jae King, Negative differential resistance (NDR) based memory device with reduced body effects ,(2002)
Theodore Warren Houston, 8t sram cell with higher voltage on the read wl ,(2006)
Denis Flandre, Jean-Didier Legat, David Bol, Ultra-low-power circuit ,(2008)
Jan P. van der Wagt, Memory cell having negative differential resistance devices ,(1998)
Jin-Man Han, Reference cells for TCCT based memory cells ,(2002)
Jan Genoe, Soeren Steudel, Praveen Raghavan, Integrated circuit device with power gating switch in back end of line ,(2014)
Zoran Krivokapic, Gen Pei, Negative differential resistance diode and SRAM utilizing such device ,(2006)
Lidor Pergament, Omer Cohen, Alexander Fish, Adam Teman, Ultra low power sram cell circuit with a supply feedback loop for near and sub threshold operation ,(2011)
Paul Berger, Compact memory structure including tunneling diode ,(2015)