Compact memory structure including tunneling diode
作者： Paul Berger
DOI:
关键词:
摘要: A resonant inter-band tunnel diode (RITD) can be fabricated using semiconductor processing similar to that used for Complementary Metal-Oxide-Semiconductor (CMOS) device fabrication, such as include silicon. memory cell (e.g., a random access (RAM) cell) one or more negative differential resistance device, tunneling diodes, provide single-bit multi-bit cell. In an example, “hybrid” fabricated, including devices, MOS transistor structure, and capacitor integrated configuration generally-available dynamic RAM (DRAM) but without requiring refresh offering higher area efficiency.
lens.org 参考文章(43)
Hung C. Lin, Multi-valued memory cell using bidirectional resonant tunneling diodes ,(1992)
Phillip E. Thompson, Paul R. Berger, Roger Lake, Sean L. Rommel, Karl Hobart, Method of making interband tunneling diodes ,(2001)
Herbert Goronkin, Saied N. Tehrani, Xiaodong T. Zhu, Jun Shen, Method of fabricating InAs/GaSb/AlSb material system SRAM ,(1995)
Hung Chang Lin, Two-dimensional resonant tunneling diode memory system ,(2000)
Y.C. Kao, A.C. Seabaugh, H.T. Yuan, Vertical integration of structured resonant tunneling diodes on InP for multi-valued memory applications LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. pp. 489- 492 ,(1992) , 10.1109/ICIPRM.1992.235557
Tetsuya Uemura, Nonmembers, Pinaki Mazumder, Design and Analysis of Resonant-Tunneling-Diode (RTD) Based High Performance Memory System ,(1999)
Hung Chang Lin, Two-dimensional resonant tunneling diode memory cell ,(2001)
Calvin Sheen, Zhiyuan Cheng, Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures ,(2007)
T. Baba, Development of quantum functional devices for multiple-valued logic circuits international symposium on multiple valued logic. pp. 2- 9 ,(1999) , 10.1109/ISMVL.1999.779687