Two-dimensional resonant tunneling diode memory system
作者： Hung Chang Lin
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摘要: A two-dimensional memory comprises a matrix of multi-valued resonant tunneling diodes (RTD). Each cell has two series RTDs with hysteretic folding V-I characteristics. The state is determined by the node voltage between and current. terminals connected to bit lines through word line switches. are fed sets data written into consecutive pulses set operating point. converted D/A converters from sub-words binary digital word. read sensing voltages at terminals, or one terminal current other terminal.
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