Multi-valued memory cell using bidirectional resonant tunneling diodes

摘要: A memory cell for multi-valued logic utilizing bidirectional folding V-I characteristics. Two devices with multiple characteristics, such as the characteristics of resonant tunneling diodes, are connected in series across a power supply. Multiple stable operating points established where positive resistance portions interesect and can be used to store levels signal. With number doubled by using both supply negative The signal written read out at connecting point two devices.