Manufacture of a tunnel diode memory
作者： Laurence H. Cooke
DOI:
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摘要: A design of a non-transistor memory core with corresponding shift register control logic may be all comprised tunnel diodes and capacitors, method for fabricating such memories use stencil non-lithographic self-aligning semiconductor processing steps to minimize cost. Designs fabrication processes I/O pads connected the are also presented.
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