Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant
作者： Kelvin T. Higa , Stuart Jc. Irvine , Robert W. Gedridge , Ralph Korenstein
DOI:
关键词: Chemical vapor deposition 、 Doping 、 Range (particle radiation) 、 Semiconductor materials 、 Materials science 、 Inorganic chemistry 、 Indium doping 、 Dopant
摘要: Triisopropylindium ((CH3)2 CH)3 In is used as an n-type dopant for II/VI semiconductor materials. This precursor particularly suited indium doping of II/V materials at low carrier concentrations in the range 1015 cm-3 and does not exhibit appreciable memory effect.
lens.org 参考文章(6)
G. Sanjiv Kamath, Owen K. Wu, Method of growing p-type group II-VI material ,(1990)
Nikhil Taskar, Donald R. Dorman, Babar A. Khan, Method of growing epitaxial layers of N-doped II-VI semiconductor compounds ,(1992)
C.H. Chen, C.T. Chiu, G.B. Stringfellow, R.W. Gedridge, Triisopropylindium for OMVPE growth Journal of Crystal Growth. ,vol. 124, pp. 88- 92 ,(1992) , 10.1016/0022-0248(92)90442-L
R. Korenstein, P. H. Hallock, D. L. Lee, E. Sullivan, R. W. Gedridge, K. T. Higa, Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium•triisopropylindium adduct Journal of Electronic Materials. ,vol. 22, pp. 853- 857 ,(1993) , 10.1007/BF02817497
S. J. C. Irvine, J. Bajaj, L. O. Bubulac, W. P. Lin, R. W. Gedridge, K. T. Higa, A new n-type doping precursor for MOCVD-IMP growth of detector quality MCT Journal of Electronic Materials. ,vol. 22, pp. 859- 864 ,(1993) , 10.1007/BF02817498
Jerome L. Elkind, Glennis J. Orloff, Patricia B. Smith, Method for via formation and type conversion in group II and group VI materials ,(1993)