Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter

摘要: A room temperature emitter (10) operating in the 3-5 μm wavelength range is provided. The includes a substrate (12) formed of material selected from group comprising cadmium telluride or zinc telluride. An epitaxial active layer (14) over mercury may be either p-type an n-type layer. doped with predetermined concentration dopant indium and arsenic. More particularly, if layer, it arsenic between approximately 1×10 16 atoms/cm 3 17 . If 5×10 14 to 15 first confinement (16) (14). n + p depending upon whether metal (18) (16).