Room‐temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes
作者： T. Ashley , C. T. Elliott , N. R. Gordon , R. S. Hall , C. D. Maxey
DOI: 10.1063/1.112728
关键词:
摘要: Room‐temperature electroluminescence at peak wavelengths of 5–7 μm has been observed in metalorganic vapor phase epitaxy‐grown mercury cadmium telluride, fully impurity doped, heterostructure, mesa diodes. The internal quantum efficiency low injection for 5 emission is around 4×10−4. Maximum output power 295 K 6 nW from an 80 diameter device (120 μW cm−2) 50% duty cycle. dependence intensity on current, the spectra, and infrared microscope image are presented.
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V. K. Malyutenko, V. P. Kislyi, S. S. Bolgov, A. P. Savchenko, A. Tybulewicz, Pressure dependence of the luminescence of CdxHg1-xTe/CdTe heterostructures Semiconductors. ,vol. 27, pp. 93- 95 ,(1993)
P. Berdahl, V. Malyutenko, T. Morimoto, Negative luminescence of semiconductors Infrared Physics. ,vol. 29, pp. 667- 672 ,(1989) , 10.1016/0020-0891(89)90107-3
Ph. Bouchut, G. Destefanis, A. Million, T. Colin, J. Bablet, Low threshold injection laser in HgCdTe Journal of Electronic Materials. ,vol. 22, pp. 1061- 1065 ,(1993) , 10.1007/BF02817525
Takeshi Morimoto, Meiro Chiba, Characteristics of Luminescence from InSb Magneto-Infrared-Emitting Diode Japanese Journal of Applied Physics. ,vol. 23, pp. L821- L823 ,(1984) , 10.1143/JJAP.23.L821
W. Dobbelaere, J. de Boeck, C. Bruynseraede, R. Mertens, G. Borghs, InAsSb light emitting diodes and their applications to infra-red gas sensors Electronics Letters. ,vol. 29, pp. 890- 891 ,(1993) , 10.1049/EL:19930594
Wayne Lo, Don E. Swets, Room‐temperature 4.6‐μm light emitting diodes Applied Physics Letters. ,vol. 36, pp. 450- 451 ,(1980) , 10.1063/1.91542
T. Ashley, C. T. Elliott, N. T. Gordon, R. S. Hall, A. D. Johnson, G. J. Pryce, Uncooled InSb/In1−xAlxSb mid‐infrared emitter Applied Physics Letters. ,vol. 64, pp. 2433- 2435 ,(1994) , 10.1063/1.111981
T. Ashley, C.T. Elliott, Nonequilibrium devices for infra-red detection Electronics Letters. ,vol. 21, pp. 451- 452 ,(1985) , 10.1049/EL:19850321
H.A. Tarry, Infra-red electroluminescence from Cd x Hg 1-x Te diodes Electronics Letters. ,vol. 22, pp. 416- 418 ,(1986) , 10.1049/EL:19860284
R.G. Humphreys, Radiative lifetime in semiconductors for infrared detection Infrared Physics. ,vol. 26, pp. 337- 342 ,(1986) , 10.1016/0020-0891(86)90054-0