Surface-emitting light emitting device

摘要: A surface-emitting, light emitting device has a columnar active region of one direct bandgap semiconductor and surrounding confining higher semiconductor. Contacts are made to the regions window is formed in alignment with permit emission from device. The semiconductors doped establish pn junction within carrier diffusion length heterojunction between regions, extending region. In use, emitted along axis response current passing radially across junction.