作者: Miroslav Ondris , Marty A. Pichler
DOI:
关键词: Cadmium telluride photovoltaics 、 Optoelectronics 、 Inorganic chemistry 、 Cadmium 、 Telluride 、 Materials science 、 Zinc telluride 、 Tellurium 、 Mercury zinc telluride 、 Cadmium sulfide 、 Mercury cadmium telluride
摘要: A three layer, photovoltaic structure having polycrystalline semiconductor layers disposed in series optically and sequential touching contact includes a relatively wide optical bandgap energy window light-absorbing layer third, that forms minority carrier mirror with the layer. All have different compositions so two heterojunctions. The third are of same conductivity type. is conveniently realized using II-VI compounds such as cadmium sulfide or zinc mercury telluride, telluride manganese telluride. Cadmium present at least novel structures. Tellurium layers. Structures according to invention may be formed by electrodeposition employ opaque transparent substrates depending on particular materials used their relative positions.