Thin film heterojunction photovoltaic cells and methods of making the same

摘要: A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing near intrinsic or n-type semiconductor compound formed at least one the metal elements Class II B Periodic Table Elements and tellurium then heating said temperature between about 250° C. 500° for time sufficient to convert suitably low resistivity p-type compound. Such may be deposited initially on surface an substrate. Alternatively, there converted layer different from The resulting exhibits substantially increased power output over similar cells not subjected present invention.