The effect of post-annealing on the electrical properties of (Pb, Sr)TiO3 thin films prepared by liquid source misted chemical deposition for ultra large-scale integration (ULSI) dynamic random access memory (DRAM) capacitor
作者： Hyun Jin Chung , Suk Jin Chung , Jin Hong Kim , Seong Ihl Woo
DOI: 10.1016/S0040-6090(01)01015-X
关键词: Dielectric 、 Inductively coupled plasma 、 Strontium titanate 、 Materials science 、 Annealing (metallurgy) 、 Dielectric loss 、 Optoelectronics 、 Electrode 、 Thin film 、 Equivalent oxide thickness
摘要: The beneficial effect of post-annealing on the properties lead–strontium–titanate (PST) thin films prepared by liquid source misted chemical deposition are reported. Their composition and depth profile were uniform. dielectric constant loss 100-nm-thick Pb0.32Sr0.68TiO3 film annealed at 650°C for 5 min in air further 630°C 30 after top electrode 560 (equivalent oxide thickness=0.70 nm) 0.0173, respectively. Especially, leakage current density was greatly influenced post-heat treatment O2 N2 ambient gas Pt deposited a PST film. 1.85×10−8 A/cm2 1 V obtained 130-nm-thick treated inductively coupled plasma (ICP).
harvard.edu
elsevier.com
sci-hub.se 参考文章(9)
Aidong Li, Chuanzhen Ge, Peng Lü, Di Wu, Sibei Xiong, Naiben Ming, Fabrication and electrical properties of sol-gel derived BaTiO3 films with metallic LaNiO3 electrode Applied Physics Letters. ,vol. 70, pp. 1616- 1618 ,(1997) , 10.1063/1.118633
Hag-Ju Cho, Sejun Oh, Chang Seok Kang, Cheol Seong Hwang, Byoung Taek Lee, Ki Hoon Lee, Hideki Horii, Sang In Lee, Moon Yong Lee, Improvement of leakage current characteristics of Ba0.5Sr0.5TiO3 films by N2O plasma surface treatment Applied Physics Letters. ,vol. 71, pp. 3221- 3223 ,(1997) , 10.1063/1.120296
Jae-Hyun Joo, Jeong-Min Seon, Yoo-Chan Jeon, Ki-Young Oh, Jae-Sung Roh, Jae-Jeong Kim, Improvement of leakage currents of Pt/(Ba, Sr)TiO3/Pt capacitors Applied Physics Letters. ,vol. 70, pp. 3053- 3055 ,(1997) , 10.1063/1.118746
H. Kawano, K. Morii, Y. Nakayama, Effects of crystallization on structural and dielectric properties of thin amorphous films of (1−x)BaTiO3‐xSrTiO3 (x=0–0.5, 1.0) Journal of Applied Physics. ,vol. 73, pp. 5141- 5146 ,(1993) , 10.1063/1.353788
O. Auciello, A. R. Krauss, J. Im, D. M. Gruen, E. A. Irene, R. P. H. Chang, G. E. McGuire, Studies of film growth processes and surface structural characterization of ferroelectric memory‐compatible SrBi2Ta2O9 layered perovskites via in situ, real‐time ion‐beam analysis Applied Physics Letters. ,vol. 69, pp. 2671- 2673 ,(1996) , 10.1063/1.117554
C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, J. F. Scott, Fatigue-free ferroelectric capacitors with platinum electrodes Nature. ,vol. 374, pp. 627- 629 ,(1995) , 10.1038/374627A0
R Dat, O Auciello, A.I Kingon, Surface roughness of PbZrxTi1-xO3 thin films produced by pulsed laser ablation-deposition Thin Solid Films. ,vol. 283, pp. 45- 48 ,(1996) , 10.1016/0040-6090(95)08518-1
Takaaki Kawahara, Mikio Yamamuka, Akimasa Yuuki, Kouichi Ono, (Ba, Sr)TiO3 Films Prepared by Liquid Source Chemical Vapor Deposition on Ru Electrodes Japanese Journal of Applied Physics. ,vol. 35, pp. 4880- 4885 ,(1996) , 10.1143/JJAP.35.4880
Da-Fu Cui, Hui-Sheng Wang, Zheng-Hao Chen, Yue-Liang Zhou, Hui-Bin Lu, Guo-Zhen Yang, Kun Ma, Hong Chen, Lin Li, Wei Liu, Yun Zhang, Crystallographic and microstructural studies of BaTiO3 thin films grown on SrTiO3 by laser molecular beam epitaxy Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 15, pp. 275- 278 ,(1997) , 10.1116/1.580524