Dielectric properties and I-V characteristics of (Pb0.4Sr0.6)TiO3 thin films improved by TiO2 buffer layers
作者： Lili Chen , Mingrong Shen , Liang Fang , Yu Xu
DOI: 10.1007/S10971-006-0649-9
关键词:
摘要: A TiO2 thin buffer layer was introduced between the (Pb0.4Sr0.6)TiO3 (PST) film and Pt/Ti/SiO2/Si substrate in an attempt to improve their electrical properties. Both PST layers were prepared by a chemical solution deposition method. It found that increased (100)/(001) preferred orientation of decreased surface roughness films, leading enhancement properties including increase dielectric constant its tunability DC voltage, as well decrease loss leakage current density. At optimized thickness deposited using 0.02 mol/l sol, 330-nm-thick films had constant, 1126, 0.044 60.7% at 10 kHz, respectively, while density 1.95 × 10−6 A/cm2 100 kV/cm.
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