Electrical characteristics of (Pb,Sr)TiO[sub 3] thin films for ultra-large-scale-integrated dynamic random access memory capacitors prepared by liquid-source misted chemical deposition
作者： H. J. Chung , S. I. Woo
DOI: 10.1116/1.1333082
关键词:
摘要: For the first time, physical and electrical properties of lead–strontium–titanate (PST) thin films were prepared by liquid-source misted chemical deposition, are reported. PST deposited on a platinum-coated Si wafer. Pb acetate, Sr Ti isoproxide used as metallic precursors. These dissolved in 2-methoxyethnol. A fine mist precursor solution was carried into deposition chamber Ar carrier gas. The crystallization film achieved heat treatment above 500 °C. composition depth profile film, measured wavelength-dispersive spectroscopy Auger electron spectroscopy, uniform. dielectric constant loss Pb0.36Sr0.64TiO3 80 nm thickness 376 (equivalent oxide thickness: 0.83 nm) 0.05, respectively. improved postheat under O2 ambient gas after top electrode Pt film. It is concluded that can be ...
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