BaTiO3Films for Silicon-on-Insulator Structure

摘要: The physical properties of BaTiO3 films deposited onto (100)-oriented silicon wafers at a low substrate temperature 350°C for fabricating silicon-on-insulator (SOI) structures are described. These were prepared by rf planar magnetron sputtering using target ceramic. did not exhibit ferroelectricity, and the dielectric constant es dissipation factor tan δ about 100 0.013, respectively. showed breakdown field larger than 1×106 V/cm excellent insulators. Thin-film transistors fabricated film film. effect mobility 34 cm2/Vs was obtained.