Ferroelectric Properties of Bi4Ti3O12Thin Films Prepared on TiO2Anatase Layer
作者： Tohru Higuchi , Makoto Nakamura , Yuji Hachisu , Masanori Saitoh , Takeshi Hattori
DOI: 10.1143/JJAP.43.6585
关键词: Composite material 、 Coercivity 、 Metalorganic vapour phase epitaxy 、 Thin film 、 Anatase 、 Chemical vapor deposition 、 Dielectric 、 Barrier layer 、 Ferroelectricity 、 Materials science 、 General Engineering 、 General Physics and Astronomy
摘要: Undoped Bi4Ti3O12 (BIT) thin films with a TiO2 anatase buffer layer were prepared on the Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The BIT film at 500°C exhibited highly a- and b-axis-oriented single phases, although no c-axis orientation. interface between substrate was very smooth. consisted of small grains good P-E hysteresis loop. ferroelectricity strongly depends thickness ratio to layer, indicating that acts not as barrier but an initial nucleation film. When is fixed [(BIT)/(TiO2)]=15, remanent polarization (Pr) coercive field (Ec) 2Pr=81.6 µC/cm2 2Ec=250 kV/cm, respectively. dielectric constant (er) 160.
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