Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy
作者： Guan-Ru Chen , Hao-Hsiung Lin , Jyh-Shyang Wang , Ding-Kang Shih
DOI: 10.1007/S11664-003-0216-X
关键词: Blueshift 、 Molecular beam epitaxy 、 Photoluminescence 、 Quantum well 、 Quenching 、 Optoelectronics 、 Epitaxy 、 Analytical chemistry 、 Luminescence 、 Exciton 、 Chemistry
摘要: Optical properties of InAs1−xNx/In0.53Ga0.47As (hereafter, abbreviated as InAsN/InGaAs) single quantum wells (SQWs) grown on InP substrates by gas source molecular-beam epitaxy are studied using photoluminescence (PL) measurements. By comparing the low-temperature PL spectra InAs/InGaAs and InAsN/InGaAs SQWs, InAs InAsN phases found to coexist in layer. Such serious alloy inhomogeneities result obvious exciton localization potential irregularities. The blue shift peak after rapid thermal annealing (RTA) is originate mainly from As-N interdiffusion inside well According temperature-dependent results, uniformity layer can be effectively improved RTA, is, thus, relieved. Comparison luminescence quenching excitation-power-dependent behavior between QWs with without nitrogen content suggests that quality QW degraded introduction nitrogen, degradation only partially recovered post-growth RTA.
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