High deposition rate processes for the fabrication of microcrystalline silicon thin films
作者： S. Michard , M. Meier , B. Grootoonk , O. Astakhov , A. Gordijn
DOI: 10.1016/J.MSEB.2012.11.020
关键词: Deposition (chemistry) 、 Materials science 、 Optoelectronics 、 Analytical chemistry 、 Plasma 、 Plasma-enhanced chemical vapor deposition 、 Silicon 、 Thin film 、 Excitation 、 Pulsed laser deposition 、 Fabrication 、 Mechanical engineering 、 General Materials Science 、 Mechanics of Materials 、 Condensed matter physics
摘要: Abstract The increase of deposition rate microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production thin-film solar cells. In this work we explored a broad range plasma enhanced chemical vapor (PECVD) parameters order to intrinsic keeping industrial relevant material quality standards. We combined excitation frequencies VHF band with high pressure power depletion regime using new facilities and achieved rates as 2.8 nm/s. evaluated from photosensitivity electron spin resonance measurements similar standard deposited at low growth rates. influence on electrical structural film properties was investigated.
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