Gradient etching of silicon-based thin films for depth-resolved measurements: The example of Raman crystallinity
作者： F. Köhler , S. Schicho , B. Wolfrum , A. Gordijn , S.E. Pust
DOI: 10.1016/J.TSF.2011.11.029
关键词:
摘要: Abstract An etching procedure was applied to microcrystalline silicon (μc-Si:H) thin films in order obtain a wedge-shaped profile for depth-resolved characterization. A microfluidic flow cell that merges deionized water with potassium hydroxide solution (KOHaq) utilized. The samples consisted of texture-etched ZnO:Al on Corning Glass substrate, p-doped layer serving as seed and the investigated intrinsic or amorphous (a-Si:H). Along etched profiles, microscopic Raman spectroscopy used estimate crystalline volume fraction Xc deposited intentionally varied silane concentration investigate a-Si:H/μc-Si:H μc-Si:H/a-Si:H transition.
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