Microcrystalline silicon thin-film solar cells prepared at low temperature using PECVD

摘要: Abstract The low-temperature deposition of μc-Si:H has been found to be effective suppress the formation oxygen-related donors that cause a reduction in open-circuit voltage (Voc) due shunt leakage. We demonstrate improvement Voc by lowering temperature down 140°C. A high efficiency 8.9% was obtained using an Aasahi-U substrate. Furthermore, optimizing textured structures on ZnO transparent conductive oxide substrates, 9.4% obtained. In addition, relatively 8.1% achieved VHF (60 MHz) plasma at rate 12 A s−1. Thus, this technique for is promising obtaining both and high-rate solar cells.