Microcrystalline silicon deposition: Process stability and process control
作者： M.N. van den Donker , T. Kilper , D. Grunsky , B. Rech , L. Houben
DOI: 10.1016/J.TSF.2006.11.119
关键词: Silicon 、 Plasma diagnostics 、 Substrate (electronics) 、 Selected area diffraction 、 Emission intensity 、 Process control 、 Raman spectroscopy 、 Chemistry 、 Analytical chemistry 、 Thin film
摘要: Applying in situ process diagnostics, we identified several drifts occurring the parallel plate plasma deposition of microcrystalline silicon (μc-Si:H). These are powder formation (visible from diminishing dc-bias and changing spatial emission profile on a time scale 10 0 s), transient SiH4 depletion decreasing SiH intensity 2 heating an increasing substrate temperature 3 s) still puzzling long-term drift 4 s). The effect these crystalline volume fraction deposited films is investigated by selected area electron diffraction depth-profiled Raman spectroscopy. An example shows how can be prevented suitable control. Solar cells using this control show enhanced performance. Options for discussed. © 2007 Elsevier B.V. All rights reserved.
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