Improvement of n/i Interface Layer Properties in Microcrystalline Silicon Solar Cell
作者： Xiang Bo Zeng , Jin Yan Li , Xiao Bing Xie , Ping Yang , Hao Li
DOI: 10.4028/WWW.SCIENTIFIC.NET/KEM.537.193
关键词:
摘要: Properties of n-i interface are critical for hydrogenated microcrystalline silicon (μc-Si:H )substrate-type (n–i–p) solar cell as it affects carrier collection, which is visible in the red response . Here, we report a remarkable improvement visible-infrared responses upon hydrogen plasma treatment （HPT）of n/i interface. We demonstrate that initial stage μc-Si:H i layer growth cell. At optimal deposition condition, 18% higher short-circuit current density was obtained than its count part without using HPT
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