A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor
作者： Kun-Wei Lin , Huey-Ing Chen , Chun-Tsen Lu , Yan-Ying Tsai , Hung-Ming Chuang
DOI: 10.1088/0268-1242/18/7/303
关键词: Schottky barrier 、 Adsorption 、 Hydrogen sensor 、 Transition metal 、 Operating temperature 、 Chemistry 、 Hydrogen 、 Analytical chemistry 、 Palladium 、 Schottky diode
摘要: An interesting hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode has been fabricated and studied. Both the steady state and the transient condition of the hydrogen …
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sci-hub.se 参考文章(18)
Ingemar Lundström, None, Hydrogen sensitive mos-structures: Part 1: Principles and applications Sensors and Actuators. ,vol. 1, pp. 403- 426 ,(1981) , 10.1016/0250-6874(81)80018-2
Wen-Shiung Lour, Wen-Lung Chang, Wen-Chau Liu, Yung-Hsin Shie, Hsi-Jen Pan, Jing-Yuh Chen, Wei-Chou Wang, Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors Applied Physics Letters. ,vol. 74, pp. 2155- 2157 ,(1999) , 10.1063/1.123785
Heng-Yong Nie, Yasuo Nannichi, Pd-on-GaAs Schottky Contact: Its Barrier Height and Response to Hydrogen Japanese Journal of Applied Physics. ,vol. 30, pp. 906- 913 ,(1991) , 10.1143/JJAP.30.906
R. L. Van Meirhaeghe, W. H. Laflere, F. Cardon, Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts Journal of Applied Physics. ,vol. 76, pp. 403- 406 ,(1994) , 10.1063/1.357089
T. L. Poteat, B. Lalevic, B. Kuliyev, M. Yousuf, M. Chen, Mos and schottky diode gas sensors using transition metal electrodes Journal of Electronic Materials. ,vol. 12, pp. 181- 214 ,(1983) , 10.1007/BF02651642
Wen-Chau Liu, Hsi-Jen Pan, Huey-Ing Chen, Kun-Wei Lin, Chik-Kai Wang, Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky Diodes Japanese Journal of Applied Physics. ,vol. 40, pp. 6254- 6259 ,(2001) , 10.1143/JJAP.40.6254
Mats Eriksson, Lars-Gunnar Ekedahl, Hydrogen adsorption states at the Pd/SiO2 interface and simulation of the response of a Pd metal–oxide–semiconductor hydrogen sensor Journal of Applied Physics. ,vol. 83, pp. 3947- 3951 ,(1998) , 10.1063/1.367150
M. Johansson, I. Lundström, L.-G. Ekedahl, BRIDGING THE PRESSURE GAP FOR PALLADIUM METAL-INSULATOR-SEMICONDUCTOR HYDROGEN SENSORS IN OXYGEN CONTAINING ENVIRONMENTS Journal of Applied Physics. ,vol. 84, pp. 44- 51 ,(1998) , 10.1063/1.368000
Y. K. Fang, S. B. Hwang, C. Y. Lin, C. C. Lee, Trench Pd/Si metal‐oxide‐semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor Applied Physics Letters. ,vol. 57, pp. 2686- 2688 ,(1990) , 10.1063/1.103800
Yasuhiro Morita, Ken-ichi Nakamura, Chol Kim, Langmuir analysis on hydrogen gas response of palladium-gate FET Sensors and Actuators B-chemical. ,vol. 33, pp. 96- 99 ,(1996) , 10.1016/0925-4005(96)01956-9