Measurement of atomic hydrogen flow density during GaAs surface cleaning

作者: V. A. Kagadei , E. V. Nefyodtsev , D. I. Proskurovski , S. V. Romanenko

DOI: 10.1117/12.802357

关键词: Chemical speciesGallium arsenidePlanarOptoelectronicsOpticsMicroelectronicsResistorChemistryHydrogenThin filmBeam (structure)

摘要: The eight-channel thin-film resistive sensor of atomic hydrogen which in the automated mode allows to measure atoms flow density atomic-molecular mix conditions low gas pressure (10 -2 -10 -4 Pa) and under action infra-red visible radiation noises is described. can be used for measurement AH distribution on large cross-section beam, including during GaAs surface cleaning. range 5u10 13 16 at.cm s -1 time 1-10 minutes. resistor produced by microelectronics planar technology that provides an opportunity high space resolution at beam spatial distributions measurement.

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