Large improvement in HgCdTe photovoltaic detector performances at LETI

摘要: The standard infrared photovoltaic technology developed for HgCdTe by LETI and industrialized SOFRADIR is based on the very simple approach of planar ion-implanted n-on-p homojunctions. Both growth liquid-phase epitaxy excellent-quality epitaxial layers simplicity process enables state-of-the-art detectors to be achieved with a high technological yield. These present shunt impedance, good quantum efficiency, low l/f noise level. diodes are diffusion-limited down temperatures much lower than 77K. Their saturation current limited minority-carrier lifetime in p-side material. R0A values around 30 ohm-cm2 routinely obtained 10.0 μm cutoff wavelength at In this paper, we show that new can increase diode more one order magnitude. This effect as result an homojunction configuration. maximum value was 655 detector Furthermore, other figures merit efficiency or impedance slightly improved, not affected. data presented 40–200K temperature range 9–13 decrease dark kept throughout these ranges. Therefore, lead large R0A, close theoretical limits comparable published p-on-n heterojunctions.