Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same
作者： Fu-Shiung Hsu , Chen-Chin Liu
DOI:
关键词: Dielectric 、 Electronic engineering 、 Layer (electronics) 、 Substrate (electronics) 、 Optoelectronics 、 Materials science 、 Non-volatile memory 、 Memory cell 、 Stack (abstract data type) 、 Oxide 、 Component (thermodynamics)
摘要: A disclosed method for forming a non-volatile memory cell includes component stack including an electron trapping layer on substrate surface. dielectric is formed over the stack, and portion removed such that remainder of exists substantially along sidewalls stack. An oxide bit line in adjacent to electrically conductive layer. described surface, Multiple spacers are positioned
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