Method of forming an embedded memory

摘要: A method of forming an embedded memory integrating nitride read only starts by ONO layer and a protective cap on surface semiconductor substrate defined with area periphery area. The has first, second third device An etching first ion implantation process form each bit line in the spacer is then formed at either side area, are removed threshold voltage for adjusted thermal oxidation forms buried drain oxide atop gate respectively. from Finally, removed,